Comparison on Electric and Ferroelectric Properties of MFS and MFIS Designs with Lead Titanate Films
PbTiO3 powder was formulated and prepared by solid state mixed oxide route. The powder was calcined at 900°C for 1h in atmospheric ambient and the phase evaluation was studied by X-ray diffractometry (XRD) with the Bragg angle between 10 deg and 70 deg. From XRD profile, it was found that lead titanate powder was successfully formed at given reaction temperature. In addition, the peak (101) was rather sharp, which indicated the polycrystalline nature. The grain particle size of lead titanate powder was 93 nm. PbTiO3 thin films were formed on naked and SiO2 buffered Si substrates by spin-coating technique. After spin-coating and subsequent annealing in oxygen, atmospheric ambient was followed to form the PbTiO3 oxide film from sol-coating. The microstructure grain growths of the MFS (Metal / Ferroelectric / Semiconductor) and MFIS (Metal/Ferroelectric/Insulator/Semiconductor) films were investigated by Scanning Electron Microscopy (SEM). Electric properties of MFS and MFIS cells with PbTiO3 oxide film were interpreted by means of I-V characteristics. C-V hysteresis and P-E hysteresis loops were measured for nonvolatile memory natures of both films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=4.3µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.
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Impact Factor = 0.465 (2013)